Material removal mechanisms in electrochemical–mechanical polishing of tantalum
By Gao, F. & Liang, H.
Published in Electrochimica Acta
2009
Abstract
Material removal mechanisms in tantalum chemical–mechanical polishing (CMP) and electrochemical–mechanical polishing (ECMP) were investigated using the single frequency electrochemical impedance spectroscopy (EIS). Through measuring the impedance of the tantalum surface, the single frequency EIS scan made it possible to observe the CMP and ECMP processes in situ. The impedance results presented competing mechanisms of removal and formation of a surface oxide layer of tantalum. Analysis indicated that the thickness of the oxide layer formed during polishing was related to the mechanical power correlated to the friction force and the rotating speed. Furthermore, the rate of growth and removal of the oxide film was a function of the mechanical power. This understanding is beneficial for optimization of CMP and ECMP processes.