Towards defect engineering in hexagonal MoS2 nanosheets for tuning hydrogen evolution and nitrogen reduction reactions
By Matanovic, Ivana; Leung, Kevin; Percival, Stephen J.; Park, James Eujin; Lu, Ping; Atanassov, Plamen; Chou, Stanley S.
Published in Applied Materials Today
2020
Abstract
Combined computational and experimental approaches were used to evaluate defective 2H-MoS2 nanosheets for their activity and selectivity for hydrogen evolution reaction (HER) and nitrogen reduction reaction (NRR). Density functional theory calculations were used to understand the relationship between HER and NRR activity on the ideal basal MoS2 plane, seven grain-boundaries, ten single-/few-atom vacancies and anti-sites, and zigzag and armchair edge sites. The results confirm that 2H-MoS2 should contain several defects with high activity for HER: armchair and zigzag edges, VS vacancy, MoS2 anti-site, and S-S and Mo-Mo grain boundaries. Considering Gibbs free energy change for all the steps in the NRR mechanism and kinetic barriers for a key NRR step, we have found that activation of perspective NRR selective sites in 2H-MoS2, namely VMoS6 and clusters of S-vacancies, would require large overpotential, conditions at which HER dominates. The DFT conclusions are supported by the electrochemical studies of NRR activity and selectivity under aqueous conditions, which show an increase in NRR activity but a decrease in Faradaic efficiency as applied cell potential becomes more negative. The results of this work therefore highlight the challenges in activating natural 2H-MoS2 for NRR, which would require additional material engineering or reaction condition optimization as a way to suppress HER, decrease the NRR overpotential or preferentially both.