Enhanced red shift in optical absorption edge and photoelectrochemical performance of N-incorporated gallium oxide nanostructures
By Jubu, P. R.; Yam, F. K.; Chahrour, Khaled M.
Published in Vacuum
Vacuum
2020
Abstract
This research paper reports enhanced red shift in the optical bandgap of ?-Ga2O3 films. Intrinsic and N-incorporated ?-Ga2O3 nanostructures were deposited on Si substrates by the hydrogen reducing-ambient chemical vapor deposition method. The effects of N addition on the structural, morphological, optical and photoelectrochemical properties were studied appropriately. X-ray diffraction analysis showed decreasing crystallite size from 165.2 to 38.2 nm with increasing NH3 flow rate. Microstructural observations by field-emission scanning electron microscope exhibited morphology transformation from nanobelts to full nanoclumps. Energy dispersive X-ray analysis revealed N concentration from 0 up to 17.1 at.% with rising ammonia flow rate. Optical reflectance measurements by UV